Comprehensive Model for Charge Carrier Recombination in Czochralski‐Grown Silicon Due to Oxygen Precipitation in Industrial Solar Cell Manufacturing

Oxygen precipitates are among the most detrimental oxygen‐related silicon bulk defects formed during solar cell manufacturing. These only high‐temperature processes, impeding an identification of prone materials incoming inspection. Moreover, prediction oxygen‐precipitate‐related charge carrier recombination currently requires advanced numerical simulation. This work presents easily implementable model to predict lifetime limit, using temperature–time profile a process as well material properties input data. In addition published analytical descriptions oxygen precipitation, empirical description retarded growth small is included. Furthermore, time‐lag in nucleation explicitly considered, which is, our knowledge, not implemented precipitation modeling so far. The calibration two free parameters achieved experimental data 19 different thermal combinations performed single material. results good agreement for used but also other materials. A validation based on passivated emitter and rear cells test structures confirms ability lifetimes after processing.